Ferroelectric random access memories : fundamentals and applications
зџіеЋџ, е®Џ 奥山, 雅則 жњ‰жњ¬, з”±еј, , Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto
Part I Ferroelectric Thin Films: Overview.- Novel Si-substituted Ferroelectric Films.- Static and Dynamic Properties of Domains.- Nanoscale Phenomena in Ferroelectric Thin Films.- Part II Deposition and Characterization Methods: Sputtering Techniques.- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films.- Recent Development of Ferroelectric Thin Films by MOCVD.- Materials Integration Strategies.- Characterization by Scanning Nonlinear Dielectric Microscopy.- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs.- Operation Principle and Circuit Design Issues.- High Density Integration.- Testing and Reliability.- Part IV Advanced-Type Memories: Chain FeRAMs.- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM.- FET-type FeRAMs.- Part V Applications and Future Prospects: Application to Future Information Technology World.- Subject Index
श्रेणियाँ:
साल:
2004
प्रकाशन:
Springer
भाषा:
english
पृष्ठ:
298
ISBN 10:
3642073840
ISBN 13:
9783642073847
श्रृंखला:
Topics in applied physics, v. 93
फ़ाइल:
PDF, 6.73 MB
IPFS:
,
english, 2004